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JSAP Paper Award - Dr. Sriram Krishnamoorthy, Zhanbo Xia and Sanyam Bajaj

We are extremely proud to say that Dr. Sriram Krishnamoorthy, Zhanbo Xia and Sanyam Bajaj and their paper, "Delta-doped β-gallium oxide field-effect transistor" have been selected for the Japan Society of Applied Physics (JSAP) Paper Award. An excerpt of the paper can be found below and the entire paper can be found here and a brief summary of the accomplishment can be found here.

Sriram Krishnamoorthy

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"We report silicon delta doping in gallium oxide (β-Ga2O3) grown by plasma-assisted molecular beam epitaxy using a shutter pulsing technique. We describe the growth procedures that can be used to realize high Si incorporation in an oxidizing oxygen plasma environment. Delta doping was adopted to realize thin (12 nm) low-resistance layers with a sheet resistance of 320 Ω/square (mobility of 83 cm2 V−1 s−1, integrated sheet charge of 2.4 × 1014 cm−2). A single delta-doped sheet of carriers was employed as a channel to realize a field-effect transistor with current I D,max = 236 mA/mm and transconductance g m = 26 mS/mm."