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- Steve Ringel
- Assoc VP & IMR Executive Dir, OR - Inst for Material Res
- Professor, Neal A Smith Chair, Electrical & Computer Engr.
- Professor, Materials Science Engineering
- Professor, Physics
2024 Neil Ave RM 375
Columbus, OH 43210
Advisor, Best Student Paper Award: Zeng Zhang.
Distinguished Scholar Award.
Chair, Scientific Advisory Board/Visiting Committee.
Member, Advisory Board.
Invited Tutorial Speaker.
Clara M. and Peter L. Scott Award for Outstanding Achievement.
Lumley Research Award.
Invited Guest Lecturer.
Co-investigator of Clean Energy Research Program.
Invited Tutorial Speaker. University of Saint Francis.
Lumley Research Award.
Advisor, MRS Gold Medal Student Award: A. Armstrong.
Neal A. Smith Endowed Chair.
Advisor, Best Student Paper Award: O. Kwon.
Advisor, Best Student Paper Award: R. Kaplar.
Advisor, MRS Gold Medal Student Award: A. Hierro.
Lumley Research Award.
Stanley F. Harrison Faculty Award for Excellence in Engineering Research & Education.
Stanley E. Harrison Faculty Award for Excellence in Engineering.
National Young Investigator Award.
- Schwarz, R.B., Ceder, G., Ringel, S.A.. 2002. "Materials for Energy Storage, Generation and Transport." Materials Research Society Press.
- S.A. Ringel, S.A., Fitzgerald, E.A., Adesida, I., Houghton, D.. 1999. "III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics." Materials Research Society Press.
- Buckley, D.N., Ringel, S.A., Ren, F.. 1995. "Symposium on Large Area Wafer Growth and Processing for Electronic and Photonic Devices and the Twentieth State of the Art Program on Compound Semiconductors." The Electrochemical Society Press.
- 2010. "The III-V solar cell on Silicon." In III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics, edited by Li, T., E. Piner, E., Dadgar, A.,
- 1998. "Electronic Properties and Deep Levels in Germanium-Silicon." In Semiconductors and Semimetals, edited by Bean, J., Hull, R.,
- 1997. "Hydrogenation of Compound Semiconductors." In Processing Technology for Semiconductors, edited by Pearton, SJ,
- Xuan Sang Nguyen,X,S; Goh,Xuan,Long; Zhang,Li; Zhang,Zeng; Arehart,Aaron,R; Ringel,Steven,A; Fitzgerald,Eugene,A; Chua,Soo,Jin, 2016, "Deep level traps in GaN LEDs grown by metal organic vapour phase epitaxy on an 8 inch Si(111) substrate." JAPANESE JOURNAL OF APPLIED PHYSICS 55, no. 6, 060306 - 060306.
- Sasikumar,A; Arehart,A,R; Via,G,D; Winningham,B; Poling,B; Heller,E; Ringel,S,A, 2015, "Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps." MICROELECTRONICS RELIABILITY 55, no. 11, 2258-2262 - 2258-2262.
- Chmielewski,Daniel,J; Grassman,Tyler,J; Carlin,Andrew,M; Carlin,John,A; Speelman,Austin,J; Ringel,Steven,A, 2014, "Metamorphic GaAsP Tunnel Junctions for High-Efficiency III-V/IV Multijunction Solar Cell Technology." IEEE JOURNAL OF PHOTOVOLTAICS 4, no. 5, 1301-1305 - 1301-1305.
- Long,R,D; Jackson,C,M; Yang,J; Hazeghi,A; Hitzman,C; Majety,S; Arehart,A,R; Nishi,Y; Ma,T,P; Ringel,S,A; McIntyre,P,C, 2013, "Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen." APPLIED PHYSICS LETTERS 103, no. 20, 201607 - 201607.
- Zhang,Z; Hurni,C,A; Arehart,A,R; Yang,J; Myers,R,C; Speck,J,S; Ringel,S,A, 2012, "Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy." APPLIED PHYSICS LETTERS 100, no. 5, 052114 - 052114.
- Grassman,Tyler,J; Brenner,Mark,R; Gonzalez,Maria; Carlin,Andrew,M; Unocic,Raymond,R; Dehoff,Ryan,R; Mills,Michael,J; Ringel,Steven,A, 2010, "Characterization of Metamorphic GaAsP/Si Materials and Devices for Photovoltaic Applications." IEEE TRANSACTIONS ON ELECTRON DEVICES 57, no. 12, 3361-3369 - 3361-3369.
- Yang,Chieh-Kai; Roblin,Patrick; Malonis,Andrew; Arehart,Aaron; Ringel,Steven; Poblenz,Christiane; Pei,Yi; Speck,James; Mishra,Umesh, 2009, "Characterization of Traps in AlGaN/GaN HEMTs with a Combined Large Signal Network Analyzer/Deep Level Optical Spectrometer System." 2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3 1-3, 1209-1212 - 1209-1212.
- Grassman,T,J; Brenner,M,R; Rajagopalan,S; Unocic,R; DEHOFF,R; Mills,M; Fraser,H; Ringel,S,A, 2009, "Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy." APPLIED PHYSICS LETTERS 94, no. 23, 232106 - 232106.
- Smith,P,E; LUECK,M; Ringel,S,A; BRILLSON,L,J, 2008, "Atomic diffusion and interface electronic structure at In0.49Ga0.51P/GaAs heterojunctions." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 26, no. 1, 89-95 - 89-95.
- Arehart,A,R; Corrion,A; Poblenz,C; Speck,J,S; Mishra,U,K; DenBaars,S,P; Ringel,S,A, 2008, "Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films." PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 5, no. 6, 1750-1752 - 1750-1752.
- Mosbacker,H,L; El Hage,S; Gonzalez,M; Ringel,S,A; Hetzer,M; Look,D,C; Cantwell,G; Zhang,J; Song,J,J; BRILLSON,L,J, 2007, "Role of subsurface defects in metal-ZnO(0001) Schottky barrier formation." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 25, no. 4, 1405-1411 - 1405-1411.
- Smith,P,E; LUECK,M; Ringel,S,A; BRILLSON,L,J, 2007, "Atomic diffusion and electronic structure in Al0.52In0.48P/GaAs heterostructures." JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 25, no. 6, 1916-1921 - 1916-1921.
- Armstrong,A; Green,D; Arehart,A,R; Mishra,U,K; Speck,J,S; Ringel,S,A, 2005, "Carbon-related deep states in compensated n-type and semi-insulating GaN : C and their influence on yellow luminescence." GAN, AIN, INN AND THEIR ALLOYS 831, 311-316 - 311-316.
- Armstrong, A.; Arehart, A.; Green, D.; Speck, J. S.; Mishra, U. K.; Ringel, S. A., 2005, "A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si." Physica Status Solidi C 2, no. 7, 2411-2414 - 2411-2414.
- Armstrong,A; Arehart,A,R; Ringel,S,A; Moran,B; DenBaars,S,P; Mishra,U,K; Speck,J,S, 2003, "Identification of carbon-related bandgap states in GaN grown by MOCVD." GAN AND RELATED ALLOYS - 2003 798, 509-514 - 509-514.
- Arehart,A,R; Poblenz,C; Heying,B; Speck,J,S; Mishra,U,K; DenBaars,S,P; Ringel,S,A, 2003, "Influence of growth parameters on the deep level spectrum in MBE-grown n-GaN." GAN AND RELATED ALLOYS - 2003 798, 735-740 - 735-740.
Papers in Proceedings
- Sasikumar,A; Arehart,A; Ringel,S,A; Kaun,S; Wong,M,H; Mishra,U,K; Speck,J,S "Direct Correlation Between Specific Trap Formation and Electric Stress-induced Degradation in MBE-grown AlGaN/GaN HEMTs." in IEEE International Reliability Physics Symposium (IRPS). (1 2012).